| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a further-high-density phase-change memory capable of minimizing an interfacial region between a phase-change material of a memory cell and at least one electrode in order to minimize electric energy for programming the memory cell. <P>SOLUTION: The phase-change memory cell 200a includes a first electrode 202, a dielectric material layer 204, a spacer material layer 206, a phase-change layer 208, and a second electrode 210. The first electrode 202 contacts the dielectric material layer 204, the spacer material layer 206 and the phase-change layer 208. The phase-change material layer 208 contacts the spacer material layer 206 and the second electrode 210. The dielectric material layer 204 and the spacer material layer 206 form a hole 209 for depositing the phase-change material layer therein. In the hole 209, the interfacial surface between the first electrode 202 and the phase-change material layer 208 has a sub-lithographic cross section. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
