发明名称 |
Method of producing large area SiC substrates |
摘要 |
A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.
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申请公布号 |
US2009014756(A1) |
申请公布日期 |
2009.01.15 |
申请号 |
US20070826278 |
申请日期 |
2007.07.13 |
申请人 |
SINGH NARSINGH BAHADUR;WAGNER BRIAN P;KNUTESON DAVID J;KAHLER DAVID;BERGHMANS ANDRE E;AUMER MICHAEL;HEDRICK JERRY W;SHERWIN MARC E;FITELSON MICHAEL M;USEFARA MARK S;MCLAUGHLIN SEAN;RANDALL TRAVIS;KNIGHT THOMAS J |
发明人 |
SINGH NARSINGH BAHADUR;WAGNER BRIAN P.;KNUTESON DAVID J.;KAHLER DAVID;BERGHMANS ANDRE E.;AUMER MICHAEL;HEDRICK JERRY W.;SHERWIN MARC E.;FITELSON MICHAEL M.;USEFARA MARK S.;MCLAUGHLIN SEAN;RANDALL TRAVIS;KNIGHT THOMAS J. |
分类号 |
H01L29/739;B32B5/16;H01L21/20 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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