| 摘要 |
A method of manufacturing a silicon structure, includes: forming an on-substrate structure on a processed layer to have a continuously changing width on a parallel plane to the processed layer; and gradually removing a target portion of the processed layer on a silicon substrate, which is located directly beneath the on-substrate structure, by isotropic etching. The processed layer may be a surface layer of the silicon substrate, or a sacrifice layer formed on the silicon substrate.
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