发明名称 METHOD FOR PRODUCTION OF PURIFIED SILICON
摘要 A standard temperature gradient (T0) and a standard solidification rate (R0) which meet the formula (1) are determined in advance based on C10max and Y0. k = [K1×Ln(R0)+K2]×[K3×exp[K4×R0×(K5×C2+K6)]]×[K7×T0+K8]-K9 (1) wherein k represents a coefficient selected from a range from 0.9 time to 1.1 times an aluminum effective distribution coefficient (k') so measured as to meet the formula (2): C10max = k'×C2×(1-Y0)k'-1 (2) wherein k' represents analuminum effective distribution coefficient; C2 represents the concentration of aluminum in a silicon molten solution raw material.
申请公布号 WO2009008555(A1) 申请公布日期 2009.01.15
申请号 WO2008JP62972 申请日期 2008.07.11
申请人 SUMITOMO CHEMICAL COMPANY, LIMITED;MEGUMI, TOMOHIRO;TABUCHI, HIROSHI 发明人 MEGUMI, TOMOHIRO;TABUCHI, HIROSHI
分类号 C01B33/037 主分类号 C01B33/037
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