| 发明名称 |
Dry etching method, fine structure formation method, mold and mold fabrication method |
| 摘要 |
A WC substrate 7 is etched by using plasma 50 generated from a mixed gas of a gas including a halogen atom and a gas including a nitrogen atom.
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| 申请公布号 |
US2009017259(A1) |
申请公布日期 |
2009.01.15 |
| 申请号 |
US20060659107 |
申请日期 |
2006.05.23 |
| 申请人 |
NAKAGAWA HIDEO;SASAGO MASARU;MURAKAMI TOMOYASU |
发明人 |
NAKAGAWA HIDEO;SASAGO MASARU;MURAKAMI TOMOYASU |
| 分类号 |
C23F1/12;C04B41/91;C23F4/00;G02B6/13 |
主分类号 |
C23F1/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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