SURFACE TREATMENT METHOD FOR WAFER

摘要

A method for treating surface of wafer using hydrofluoric acid is provided to improve polish efficiency by reducing polish resistance due to oxide film in polishing. A method for treating surface of wafer using hydrofluoric acid comprises the following steps: a step for performing an edge polish of a wafer(S1); a step for performing a SC1 cleaning between a stocking polishing and a final polishing process in a double side polishing(S2); a step for removing a surface oxide film of the wafer by cleaning with hydrofluoric acid(HF)(S3); a step for forming a protective film on the wafer surface(S4); a step for standing by the wafer(S5); and a step for polishing the wafer(S6).