| 摘要 |
<p>Disclosed is a flash memory device with an enlarged control gate structure, and various methods of make same. In one illustrative embodiment, the device includes a plurality of floating gate structures (124) formed above a semiconducting substrate, an isolation structure (114) positioned between each of the plurality of floating gate structures (124) and a control gate structure (128) comprising a plurality of enlarged end portions (130), each of the enlarged end portions (130) being positioned between adjacent floating gate structures (128).</p> |
