发明名称 A HIGH POWER INTEGRATED RF AMPLIFIER
摘要 An integrated HF-amplifier has an input bond pad, cells displaced in a first direction, and an output bond pad. Each has a amplifier with input pad, active area, and output pad. The active area is arranged in-between the input and output pads, and the input pad, active area, and output pad are respectively displaced in a second direction substantially perpendicular to the first direction. A first network interconnects input pads of adjacent cells, and extends in the first direction. A second network interconnects output pads of adjacent cells, and extends in the first direction. The first and second networks obtain an output signal at the output bond pad having for all interconnected cells an equal phase shift and amplitude for a same input signal at the input bond pad. At particular bias and phase shift conditions this provides a Doherty amplifier with improved efficiency at power back off.
申请公布号 EP2013943(A2) 申请公布日期 2009.01.14
申请号 EP20070735617 申请日期 2007.04.24
申请人 NXP B.V. 发明人 BLEDNOV, IGOR
分类号 H01Q3/26 主分类号 H01Q3/26
代理机构 代理人
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