Method of copper transport prevention by a sputtered gettering layer on backside of wafer,申请号EP20010480055-传众专利搜索

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发明名称	Method of copper transport prevention by a sputtered gettering layer on backside of wafer
摘要
申请公布号	EP1174918(B8)	申请公布日期	2009.01.14
申请号	EP20010480055	申请日期	2001.07.17
申请人	CHARTERED SEMICONDUCTOR MANUFACTURING PTE LTD.	发明人	GUPTA, SUBHASH;CHOOI, SIMON;ROY, SUDIPTO RANENDRA;HO, PAUL KWOK KEUNG;YI, XU;ALIYU, YAKKUB;ZHOU, MEI SHENG;SUDIJONO, JOHN LEONARD
分类号	H01L21/322;C23C14/16;H01L21/288	主分类号	H01L21/322
代理机构		代理人
主权项
地址

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