| 摘要 |
<p>The vacuum channel transistor and the electric field emitting flat display are provided to increase the amount of the electronics delivered through the gate voltage of the small size to drain and to improve the current characteristic of the vacuum electric field transistor. The vacuum channel transistor(400) comprises the semiconductor substrate(401), the channel insulating layer(402), the source(403), the drain(404), the gate(405) and the second electronic emitting layer(406). The gate is formed in the surface of the semiconductor substrate. The channel insulating layer is formed in the upper part. The channel insulating layer play a role of preventing the arc discharge between the gate and the source. The space between the source and the drain are the vacuum channel. And the electronics emitted from the source is delivered to the drain through the vacuum channel. The second electronic emitting layer is formed on the channel insulating layer of the region between the source and the drain.</p> |
