| 摘要 |
<p>A method for measuring an on-resistance of a load-path of a transistor is disclosed. The transistor comprises a control terminal and its load path is connected between the first and the second supply terminal. The method comprises the following steps: applying a control signal to the control terminal of the transistor for switching the transistor into an on-state, such that the transistor carries a load current, measuring a voltage drop across the load-path of the transistor yielding a first measurement value, feeding a test current into the load-path of the transistor, such that the test current and the load current superpose, measuring a voltage drop across the load-path of the transistor yielding a second measurement value, and determining the on-resistance of the load-path of the transistor from difference of the first and second measurement value.</p> |
