发明名称 Technique for monitoring and controlling a plasma process
摘要 An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.
申请公布号 US7476849(B2) 申请公布日期 2009.01.13
申请号 US20060371907 申请日期 2006.03.10
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 KOO BON-WOONG;GODET LUDOVIC;VOURLOUMIS VASSILIS PANAYOTIS;SINGH VIKRAM;FANG ZIWEI
分类号 H01J49/40;G01N27/26;G01N33/00 主分类号 H01J49/40
代理机构 代理人
主权项
地址
您可能感兴趣的专利