发明名称 LOW TEMPERATURE CO-FIRED CERAMICS AND METHOD OF MANUFACTURING THE SAME
摘要 A low temperature co-fired ceramic substrate and manufacturing method thereof is provided to prevent generation of crack in hetero junction about ceramic layer in which coefficient of thermal expansion is different each other by forming buffer layer having a plurality of line holes. A first ceramic layer(111) is made of material having a first coefficient of thermal expansion. A second ceramic layer(112) is made of material having a second coefficient of thermal expansion larger than the first coefficient of thermal expansion. A buffer layer(110) is positioned between the first ceramic layer and the second ceramic layer, has a first region(111') formed in order to include a first line hole(111'-1), and has a second region(112') formed in order to include a second line hole(112'-1). The buffer layer prevents a stress by difference of the coefficient of thermal expansion of the first ceramic layer and the second ceramic layer.
申请公布号 KR100878399(B1) 申请公布日期 2009.01.13
申请号 KR20070112114 申请日期 2007.11.05
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 CHANG, MYUNG WHUN;LEE, JONG MYEON
分类号 H05K3/46 主分类号 H05K3/46
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