SEMICONDUCTOR DEVICE WITH MULTI-LAYER METAL LINE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device capable of improving step coverage of wiring and short in overlap region of multilayer wiring and forming method thereof are provided to prevent increase of contact resistance due to decrease of contact area or short of upper level wiring due to step coverage fault. At least three or more first wirings(111,112,113) are formed on a semiconductor substrate in a row. The semiconductor substrate including the first wiring is successively covered with a passivation film(114) and a first insulation layer(130). A second wiring(120) is formed between the passivation film on a first connection wiring of the first wiring located in a center and the first insulation layer. A third pad wiring(141) penetrates the first insulation layer and the passivation film, and is connected to each first both sides wiring included in both sides of the first connection wiring. The third pad wiring and the first insulation layer are covered with a second insulation layer(150).