Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper

摘要

1,007,598. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. March 28, 1962 [March 29, 19611, No. 11945/62. Heading H1K. A PNP semi-conductor device in a sealed housing has the N-type zone in contact with a substance on a small portion of the surface which acts electropositively so as to induce negative charges on the surface of the N-zone and so prevent any tendency for a shortcircuiting P-type channel to form. The substance may be in the form of a lacquer such as a silicone modified terephthalic ester resin, or the surrounding space in the enclosure may contain ammonia in aqueous or gaseous form. Alternatively, a lacquer comprising 20% of alizarin may be used. Fig. 4 shows a semiconductor device comprising an N-type body la with P-type layers 161 and 1611 and a further N-type layer under electrode 2 so that the arrangement provides a PNPN device which may be used as a transistor or semi-conductor thyratron. The body is contained in a sealed housing with an electropositive substance as described so that short-circuiting across the exposed surface of N-type 1a is avoided. The semi-conductor material may be silicon, germanium or an A III B V compound.