METHOD FOR FORMING BIT-LINE OF SEMICONDUCTOR DEVICE

摘要

The method for forming bit line of the semiconductor device is provided to solve the not-open (Not Open) problem in the storage electrode contact hole formation by The BOE chemical process and O3 cleaning process. The gate electrode is formed on the semiconductor substrate. The interlayer insulating film including the bit line contact plug is formed in the entire surface. The barrier metal layer connected with the bit line contact plug is formed on the interlayer insulating film. The tungsten layer is formed on the barrier metal layer. The tungsten layer and barrier metal layer are etched and the bit line tungsten pattern and barrier metal pattern are formed. The side walls of the barrier metal pattern and bit line tungsten pattern are etched by using the BOE chemical. The O3 cleaning process is performed on the side wall of the barrier metal pattern and bit line tungsten pattern.