| 摘要 |
The method of manufacturing the semiconductor device is provided to prevent the short of the top conductive layer and contact plug by burying the contact hole with the second conductive film. The interlayer insulating film(32) having the contact hole(33) exposing the constant area of the substrate(30) is formed on the substrate. The bottom of the contact hole is buried with the first conductive film(34). The contact hole is completely buried with the second conductive film(35). The polishing is performed in order to remove the second conductive film of the upper part of interlayer insulating film and then the contact plug(36) is formed. The first conductive film is formed with the polysilicon layer. The second conductive film is formed with the tungsten film.
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