METHOD OF ANALYZING DEFECT OF A SEMICONDUCTOR CHIP AND APPARATUS THEREFOR

摘要

A failure analysis method and a failure analysis device are provided to interpret the malfunction of the semiconductor chip without the terminal connection with outside. An LSI chip(1) is fixed by a laser beam(2) for generating the photo current. The viewed region of the LSI chip is irradiated by a laser beam(3) for heating. The current variance generated from the LSI chip by the irradiation of the laser beam for the heating and the laser beam for generating the photo current is detected by a SQUID magnetic flux meter(4). The malfunction of the LSI chip is analyzed based on the current variance detected by the SQUID magnetic flux meter. The irradiation of the laser beam for the heating and the laser beam for generating the photo current is performed at the backside of the LSI chip.