GALLIUM NITRIDE-BASED SEMICONDUCTOR ELEMENT, OPTICAL DEVICE USING THE SAME, AND IMAGE DISPLAY APPARATUS USING OPTICAL DEVICE

摘要

A gallium nitride semiconductor element is provided to suppress the increment of the power consumption and prevent the lowering of the characteristic of the image display due to cross-talk. A first GaN system compound layer comprises the n-type conductive layer. A second GaN system compound layer comprises the p-type conductive layer. An active layer is formed between the first GaN system compound layer and the second GaN system compound layer. The first GaN system compound layer comprises the underlying layer which is more than 3x1018/cm^2 and less than 3x1019/cm^2. If the reverse bias of 5V is applied, the per square leakage current density of the active layer is 2x10-5A/cm^2 or less.