ORGANIC THIN FILM TRANSISTOR AND METHOD FOR FABRICATING OF THE SAME

摘要

An organic thin film transistor and a method for fabricating the same are provided to increase the hole current by forming the planarization layer and the organic semiconductor layer having the crystal orientation anchoring force. A gate electrode(2) and a gate insulating layer are formed on an insulating substrate. A self alignment planarization layer having the crystal orientation regulation in respect with the organic semiconductor material is formed on the gate insulating layer. An inorganic transparent conductive layer is formed on the part except for the region where the self alignment planarization layer is not formed. A planarization layer of the constant size, a source electrode, a drain electrode and a gate electrode terminal are formed on the insulating substrate by etching the self alignment planarization layer, and the inorganic transparent conductive layer and the gate insulating layer.