发明名称 |
Method of manufacturing semiconductor device and semiconductor device |
摘要 |
According to an embodiment of the present invention, a method of manufacturing a semiconductor device, comprising forming a conducting layer on a substrate; forming a resist mask having an opening in a prescribed position on the conducting layer; forming a first plated film in the opening by supplying an electric current to the conducting layer; increasing the interval between an inner side surface of the resist mask forming the opening and the first plated film by setting back the inner side surface; and forming a second plated film in the opening resulting from the setback of the inner side surface to cover the first plated film by supplying an electric current to the conducting layer. |
申请公布号 |
US7473628(B2) |
申请公布日期 |
2009.01.06 |
申请号 |
US20060358137 |
申请日期 |
2006.02.22 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SETO MASAHARU;EZAWA HIROKAZU |
分类号 |
H01L21/44;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|