发明名称 |
Bitline of semiconductor device having stud type capping layer and method for fabricating the same |
摘要 |
A semiconductor device with a bitline structure has a stud type capping layer. A method of fabricating the same achieves sufficient process margins and reduces parasitic capacitance. The device may include an insulating film formed on a semiconductor substrate and having a bitline contact and a groove-shaped bitline pattern, a bitline formed on the bitline contact and on a portion of the bitline pattern and that is surrounded by the insulating film, and a bitline capping layer formed on the bitline within the bitline pattern and the insulating film that protrudes from the insulating film. A protruded portion of the bitline capping layer is wider than a width of the bitline.
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申请公布号 |
US7473954(B2) |
申请公布日期 |
2009.01.06 |
申请号 |
US20050249097 |
申请日期 |
2005.10.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG MUN-MO;LEE CHANG-HUHN;YOSHIDA MAKOTO |
分类号 |
H01L21/8242;H01L29/94;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L27/105;H01L27/108;H01L29/40 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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