发明名称 Thin film transistors array and pixel structure
摘要 A pixel structure having a storage capacitor therein is provided. The pixel structure comprises a substrate, a first capacitor electrode, a capacitor dielectric layer, a second capacitor electrode, a passivation layer and a pixel electrode. The first capacitor electrode is disposed over the substrate. The capacitor dielectric layer is disposed over the first capacitor electrode. The second capacitor electrode is disposed over the capacitor dielectric layer. The second capacitor electrode has a protrusion protruding beyond the edge of the first capacitor electrode. The passivation layer is disposed over the second capacitor electrode. The passivation layer has an opening that exposes the second capacitor electrode. The pixel electrode is disposed over the passivation layer. The pixel electrode is electrically connected to the second capacitor electrode through the opening in the passivation layer.
申请公布号 US7473927(B2) 申请公布日期 2009.01.06
申请号 US20040904875 申请日期 2004.12.02
申请人 AU OPTRONICS CORPORATION 发明人 LAI HAN-CHUNG
分类号 H01L31/112 主分类号 H01L31/112
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