Filmmaterial und Film mit niedriger Dielektrizitätskonstante

摘要

A film forming material (I) has a low dielectric constant and comprises siloxane resin and polycarbosilane that are dissolved together. Independent claims are included for: (i) a film (II) prepared from the material (I) that is bonded with the siloxane resin; (ii) a semi-conductor device comprising a semi-conductor substrate and a film (II); (iii) a process for the production of the semiconductor device by: (a) forming a first film of a silicon oxide containing porous material on a surface of a semi-conductor substrate; (b) forming a second layer of a second silicon oxide containing porous material directly onto the surface of the first film whereby the etching rate of the second film is greater than the etch rate of the first film; (c) forming a trench having a depth that is greater than the thickness of the second film and a through hole through the first film which partially overlaps with the trench and embedding a conductive material into the through hole and trench.