| 摘要 |
Provided are an image sensor and a method of fabricating the same. The image sensor includes a substrate having an active area and a device isolation area; a well implantation area in the active area; a threshold voltage implantation area in the well implantation area; and a transistor gate on the threshold voltage implantation area, wherein the threshold voltage implantation has a width greater than a width of the transistor gate.
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