| 摘要 |
A method of forming cell bitline contact plugs is disclosed in the present invention. After providing a semiconductor substrate with a first region and a second region, cell bitline contacts are formed at the first region. After forming bitline pattern openings at the second region, poly spacers are formed on sidewalls of the cell bitline contacts and the bitline pattern openings. A substrate contact and a gate contact are then formed within the openings at the second region. After forming a trench around each of the substrate contact and the gate contact by performing an etching process, cell-bitline contact plugs, a substrate contact plug, and a gate contact plug are formed.
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