| 摘要 |
Methods for producing MEMS (microelectromechanical systems) devices with a thick active layer and devices produced by the method. An example method includes heavily doping a first surface of a first silicon wafer with P-type impurities, and heavily doping a first surface of a second silicon wafer with N-type impurities. The heavily doped first surfaces are then bonded together, and a second side of the first wafer opposing the first side of the first wafer is thinned to a desired thickness, which may be greater than about 30 micrometers. The second side is then patterned and etched, and the etched surface is then heavily doped with P-type impurities. A cover is then bonded to the second side of the first wafer, and the second wafer is thinned.
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