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发明名称
包含氧化层之半导体发光装置
摘要
本发明揭示一种包含一半导体结构之装置,该半导体结构包括一安置于一n型区域与一p型区域之间的III族氮化物发光层。该半导体结构成长在一安置于第一与第二III族氮化物层之间的氧化层上。该氧化层可藉由增加其上成长有发光层之模板之平面内晶格常数而至少部分减轻发光层中之应变。该氧化层可藉由在该装置中成长一AlInN层,蚀刻一沟槽以暴露该AlInN层,接着氧化该AlInN层而形成。
申请公布号
TW200901519
申请公布日期
2009.01.01
申请号
TW097114335
申请日期
2008.04.18
申请人
飞利浦露明光学公司
发明人
强那森J 威尔 二世;麦可R 克莱米斯
分类号
H01L33/00(2006.01);H01L21/20(2006.01)
主分类号
H01L33/00(2006.01)
代理机构
代理人
陈长文
主权项
地址
美国
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