| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a trench MOSFET along with its manufacturing method, of which fast switching speed and low on resistance are maintained with a simple manufacturing process and reduced cost. SOLUTION: In the semiconductor device, a trench 7 is formed on one main surface of a semiconductor wafer 16, and a gate electrode is embedded in the trench 7 through a gate oxide film 8. A first gate electrode 9a is formed on the side wall of the trench 7 through the gate oxide film 8. An insulating film 1 consisting of other than silicon oxide is formed on the bottom of the trench 7 which is not covered with the first gate electrode 9a through the gate oxide film 8. A second gate electrode 9b is formed to contact the first gate electrode 9a and the insulating film. COPYRIGHT: (C)2008,JPO&INPIT
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