HIGH FORWARD CURRENT DIODES FOR REVERSE WRITE 3D CELL AND METHOD OF MAKING THEREOF

摘要

A nonvolatile memory device includes at least one memory cell which comprises a diode and a metal oxide antifuse dielectric layer, and a first electrode and a second electrode electrically contacting the at least one memory cell. In use, the diode acts as a read / write element of the memory cell by switching from a first resistivity state to a second resistivity state different from the first resistivity state in response to an applied bias.