| 摘要 |
<p>The method of manufacturing the semiconductor device is provided to prevent the difference of height between the pin-patterns and to prevent characteristic deterioration of the threshold voltage after forming a subsequent protrusion type gate. The method of manufacturing the semiconductor device comprises as follows. A step is for forming the trench(T) within the semiconductor substrate(100). A step is for filling the insulating layer for the first element isolation with the thickness which completely does not fill the trench. A step is for forming the etch stopping layer(110) with the thickness which does not bury the trench on the insulating layer for the first element isolation. A step is for forming the element isolation film by forming the insulating layer(112) for the second element isolation to fill the insulating layer(108) for the first element isolation and the trench having the etch stopping layer. A step is for performing a recesses on the element isolation film in order to have the height lower than the surface of the semiconductor substrate until the etch stopping layer is exposed. A step is for forming the gate on the semiconductor substrate including the recessed element isolation film.</p> |
