Semiconductor power module

摘要

A semiconductor power module has an insulative substrate (2) which has a metal wiring pattern (22) formed on an upper first surface of an insulating layer (21), a metal conductor (23) formed on a rear face thereof, opposite the first surface so that the insulative layer (21) is between the metal wiring pattern (22) and the metal conductor (23). A semiconductor chip (1) is joined to the metal wiring pattern (22) formed on the first surface of the insulative layer (21), using Pb-free solder with a low melting point. A heat sink (4) is bonded to the metal conductor (23) formed on the other surface of the insulative layer (21), using a highly heat conductive adhesive (5) having a thermal conductivity of 2 W/(mK) or more.