发明名称 METHOD OF FORMING LUTETIUM AND LANTHANUM STRUCTURES
摘要 <p>Methods of forming dielectric structures are shown. Methods of forming dielectric structures are shown that include lutetium oxide and lanthanum aluminum oxide crystals embedded within the lutetium oxide. Specific methods shown include monolayer deposition which yields process improvements such as chemistry control, step coverage, crystallinity/microstructure control.</p>
申请公布号 WO2009002560(A1) 申请公布日期 2008.12.31
申请号 WO2008US08078 申请日期 2008.06.27
申请人 MICRON TECHNOLOGY, INC.;AHN, KIE Y.;FORBES, LEONARD 发明人 AHN, KIE Y.;FORBES, LEONARD
分类号 H01L21/28;H01L21/314 主分类号 H01L21/28
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