Thin film transistor method of fabricating the same organic light emitting diode display device including the same and method of fabricating the same

摘要

A thin film transistor includes a substrate, a semiconductor layer disposed on the substrate, including a channel region and source and drain regions and crystallized using a metal catalyst, a gate electrode disposed to correspond to a predetermined region of the semiconductor layer, a gate insulating layer disposed between the gate electrode and the semiconductor layer to insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer, respectively. The metal catalyst within 15 nm (150Å) from a surface of the semiconductor layer in a vertical direction is formed to have a concentration exceeding 0 and not exceeding 6.5 × 10 17 atoms per cm 3 in the channel region of the semiconductor layer. An organic light emitting diode (OLED) display device includes the thin film transistor.