发明名称 |
Dual damascene multi-level metallization |
摘要 |
A method for forming an interconnect structure, the interconnect structure comprising: a lower level wire having a side and a bottom, the lower level wire comprising: a lower core conductor and a lower conductive liner, the lower conductive liner on the side and the bottom of the lower level wire; an upper level wire having a side and a bottom, the upper level wire comprising an upper core conductor and an upper conductive liner, the upper conductive liner on the side and the bottom of the upper level wire; and the upper conductive liner in contact with the lower core conductor and also in contact with the lower conductive liner in a liner-to-liner contact region.
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申请公布号 |
US7470613(B2) |
申请公布日期 |
2008.12.30 |
申请号 |
US20070619748 |
申请日期 |
2007.01.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AGARWALA BIRENDRA N.;COKER ERIC M.;CORREALE, JR. ANTHONY;RATHORE HAZARA S.;SULLIVAN TIMOTHY D.;WACHNIK RICHARD A. |
分类号 |
H01L21/4763;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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