发明名称 |
Semiconductor component comprising a buried mirror |
摘要 |
A method for forming a buried mirror in a semiconductor component includes the steps of forming a structure comprising a semiconductor layer laid on an insulating layer covering a substrate; forming one or several openings in the semiconductor layer emerging at the surface of the insulating layer; eliminating a portion of the insulating layer, whereby a recess is formed; forming a second thin insulating layer against the wall of the recess; and forming a metal layer in the recess against the second insulating layer.
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申请公布号 |
US7470559(B2) |
申请公布日期 |
2008.12.30 |
申请号 |
US20050297973 |
申请日期 |
2005.12.08 |
申请人 |
STMICROELECTRONICS SA;STMICROELECTRONICS (CANADA) INC. |
发明人 |
JOUAN SEBASTIEN;MARTY MICHEL |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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