| 摘要 |
<p>The phase-change memory and a method of forming the same are provided to reduce the current consumption amount of the phase-change memory and to increase the calorific value of the contact point of the phase changing film and the second conductive region. The phase-change memory(100) comprises the semiconductor substrate(110), the first interlayer insulating film, and the source and drain contact plugs(130,140), the bottom electrode(150), the phase changing film(160), the second inter metal dielectric, the upper contact electrode(180). The semiconductor substrate is formed on the gate electrode(111), the source and drain regions(112, 113). The first interlayer insulating film is formed in the outer circumference of the gate electrode among the semiconductor board. The source and drain contact plug are connected through the first interlayer insulating film to the source and drain region. The bottom electrode is formed on the first interlayer insulating film. The bottom electrode has the first conductive region(152) and the second conductive region(154). The phase changing film contacts the second conductive region among the bottom electrode. The upper contact electrode is connected through the second inter metal dielectric to the phase changing film.</p> |
