EDS DEVICE AND METHOD OF FABRICATING THE SAME

摘要

An electrostatic discharge device and a manufacturing method thereof are provided to improve productivity and cut cost down as a mask process for forming a first conductivity type heavy doped region is omitted. An electrostatic discharge device comprises a semiconductor substrate(100), a gate stack(220), a area-source(230), a drain region(240), and a resistor(320). The gate stack is separated with fixed interval on the semiconductor substrate and is extended to a task and is formed. The area-source and drain region are arranged in both sides of each gate stack and are formed. The resistor is partly overlapped with the upper side of each gate stack and is extended to a task and is formed.