发明名称 Method of manufacturing a light emitting device
摘要 To reduce the number of layers of an EL layer so that it can be manufactured at a reduced cost. An electrode (a) (102) and an EL layer (103) are formed on an insulator (101), and the EL layer (103) is subjected to plasma processing. A carrier injection region (104) is formed as a result in a superficial portion of the EL layer (103). An electrode (b) (105) is formed thereon to complete an EL element. The EL layer (103) is high in carrier injection efficiency despite being substantially a single layer.
申请公布号 US7468285(B2) 申请公布日期 2008.12.23
申请号 US20050210640 申请日期 2005.08.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;FUKUNAGA TAKESHI
分类号 H01L21/00;H01L51/00;H01L51/30;H01L51/50 主分类号 H01L21/00
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