发明名称 |
Non-volatile memory cells and methods of manufacturing the same |
摘要 |
Methods for forming non-volatile memory cells include: (a) providing a semiconductor substrate having at least two source/drain regions, and a dielectric material disposed on the substrate above at least one of the at least two source/drain regions wherein the dielectric material has an exposed surface, and wherein the at least two source/drain regions are separated by a recess trench having an exposed surface, wherein the trench extends downward into the substrate to a depth position below the at least two source/drain regions; (b) forming a charge-trapping layer on the exposed surfaces of the dielectric material and the recess trench; and (c) forming a gate above the charge-trapping layer.
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申请公布号 |
US7468299(B2) |
申请公布日期 |
2008.12.23 |
申请号 |
US20050197659 |
申请日期 |
2005.08.04 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HO CHIAHUA;LAI ERH-KUN;LUE HANG-TING |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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