发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device whose occupancy area is reduced and which can measure the temperature of a semiconductor element at a low cost. SOLUTION: The semiconductor device comprises: an IGBT 11 provided with a control electrode to which a driving voltage is applied and switched between a conductive state and a non-conductive state on the basis of the driving voltage; a driving circuit 22 for applying the driving voltage to the control electrode; a detection circuit 21 for detecting a first voltage having fixed relation with the voltage applied to the IGBT 11 by inputting voltage detection signals W vibrated by a prescribed frequency to the control electrode; and a control circuit 23 for calculating the temperature of the IGBT 11 on the basis of the first voltage detected in the detection circuit 21 and controlling the driving circuit 22 on the basis of the calculated temperature. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008305984(A) 申请公布日期 2008.12.18
申请号 JP20070151836 申请日期 2007.06.07
申请人 TOSHIBA CORP 发明人 IZUMI MASATO;OMURA ICHIRO
分类号 H01L23/58;H01L21/822;H01L27/04 主分类号 H01L23/58
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