发明名称 ULTRAVIOLET SENSOR
摘要 PROBLEM TO BE SOLVED: To obtain a diode-type ultraviolet sensor which has a laminate structure for forming hetero junction, has no directivity, does not need an extraction electrode and further has flat spectral wavelength sensitivity characteristics over a wide wavelength range. SOLUTION: The ultraviolet sensor 1 includes a laminate 4 containing a ZnO layer 2 as an n-type semiconductor and a (Ni, Zn)O layer 3 as a p-type semiconductor. First and second terminal electrodes 5 and 6 are respectively provided on respective ends of the laminate 4. First and second current path application electrodes 7 and 8 electrically connected with the first and second terminal electrodes 5 and 6 are provided in the (Ni, Zn)O layer 3 at a predetermined interval 9 between them and on the same plane. A third current path application electrode 10 with a thin line is provided on an external surface of the ZnO layer 2. The ZnO layer 2 is located on a light receiving side for ultraviolet rays. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008305815(A) 申请公布日期 2008.12.18
申请号 JP20070148751 申请日期 2007.06.05
申请人 MURATA MFG CO LTD 发明人 NAKAMURA KAZUYOSHI
分类号 H01L31/0264 主分类号 H01L31/0264
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