| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state photographing apparatus in which the impact of noise charge is suppressed, and which has high sensitivity and does not produce residual image, and to provide a method of manufacturing the same. SOLUTION: The solid photographing apparatus includes a picture element containing a photoelectric converting element 2 formed in a semiconductor substrate. The photoelectric converting element 2 includes: a first semiconductor layer 6 of a first conductivity type; a second semiconductor layer 4 of a second conductivity type joined on the first semiconductor layer 6; a third semiconductor layer 15 which is prepared on the second semiconductor layer 4, in which band gap energy is smaller than that of the second semiconductor layer 4, which consists of a semiconductor of a single crystal and contains a dopant; and a fourth semiconductor layer 11 of the first conductivity type which covers the side surface and top surface of the third semiconductor layer 15. Since the fourth semiconductor layer 11 is prepared, the current which flows at the time of dark can be reduced. COPYRIGHT: (C)2009,JPO&INPIT
|
