发明名称 |
Occupancy Based on Pattern Generation Method For Maskless Lithography |
摘要 |
An occupancy based pattern generation method for a maskless lithography system using micromirrors is disclosed. The present invention includes the steps of recognizing a pattern upon the substrate through the extraction of the pattern boundary and the construction of the pattern region and recognizing the pattern upon the micromirror through the confirmation of the micromirror dependent lithographic pattern region, the extraction of the micromirror dependent pattern based on the occupancy, and the construction of the stream of binary patterns containing binary reflection information for the micromirrors in accordance with the substrate scrolling.
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申请公布号 |
US2008313593(A1) |
申请公布日期 |
2008.12.18 |
申请号 |
US20060095037 |
申请日期 |
2006.11.02 |
申请人 |
SEO MAN SEUNG;KIM HAERYUNG |
发明人 |
SEO MAN SEUNG;KIM HAERYUNG |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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