| 摘要 |
A vapor-phase growth equipment and a method of vapor phase growth are provided to uniform cooling after an epitaxial growth process and reduce the descended temperature time of the wafer substrate. A vapor-phase growth equipment comprises a gas supply inlet(12), a exhaust pipe(14), a wafer holding member, a gas rectifying plate(13) in a reactor of cylindrical shape. The gas supply inlet is positioned in the upper part of the reactor. The exhaust pipe is positioned in the lower part of the reactor. The wafer holding member sets up with placing on the wafer. The gas rectifying plate comprises the gas rectifying plate between the wafer holding member and gas supply inlet. The clearance of the wafer holding member and gas rectifying plate is set up so that the cooling type gas for cooling wafer is the rectifying state on the wafer plane or the wafer holding member plane.
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