| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing agent which is applied to a substrate having an insulating film on which a TEOS insulating film and a Low-k film of a low dielectric constant are laminated to obtain a high polishing rate for the TEOS insulating film, effectively suppresses a polishing rate for the insulating film of a low strength like the Low-k film, and also attains a suppression of scratches caused by an aggregation of solid abrasive grains or the like. <P>SOLUTION: The polishing agent is one for polishing a barrier layer of a semiconductor integrated circuit, and contains: (A) quaternary ammonium cation; (B) a corrosion inhibitor; (C) a nonionic surfactant; and (D) colloidal silica, wherein its pH is 2.5 to 5.0. It is preferable that (C) the nonionic surfactant is one type or more selected from a group consisting of an ether type nonionic surfactant, an ether-ester type nonionic surfactant, and an ester type nonionic surfactant. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
