发明名称 SPUTTERING METHOD AND SYSTEM, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT
摘要 PROBLEM TO BE SOLVED: To achieve film deposition with a narrow film thickness distribution using a target 3 with a diameter d of a substrate 2 or a diameter D smaller than that in film deposition by sputtering. SOLUTION: The sputtering system includes a substrate 2 that is rotatably set, and a target 3. If the angle of the central axis A of the target 3 to the normal of the substrate 2 is defined asθ, the distance from the intersection P between the central axis A of the target 3 and the plane including the surface of the substrate 2 to the rotary axis B of the substrate 2 is defined as F, and the distance from the intersection P to the center of the target 3 is defined as L, the target 3 is provided at a position satisfying the following conditions: d≥D, 15°≤θ45°, 50 mm≤F≤400 mm, and 50 mm≤L≤800 mm, wherein the projection plane of the target 3 to the plane including the surface of the substrate 2 comes to the outside of the substrate. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008303470(A) 申请公布日期 2008.12.18
申请号 JP20080229523 申请日期 2008.09.08
申请人 CANON ANELVA CORP 发明人 TSUNEKAWA KOJI;HIRATA KAZUO
分类号 C23C14/34;H01L21/285 主分类号 C23C14/34
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