发明名称 |
INTERTWINED FINGER CAPACITORS |
摘要 |
<p>Capacitive structures in integrated circuits are disclosed. The capacitive structures are formed on a substrate. Each capacitive structure includes a first conductive finger and a second conductive finger. The first and second conductive fingers are arranged in parallel with each other and separated from each other by a dielectric material. The first finger is connected to a first interconnect and the second conductive finger is connected to a second interconnect. A first capacitor is formed from a first group of the plurality of capacitive structures having respective interconnects coupled together. A second capacitor is formed from a second group of the plurality of capacitive structures having respective interconnects coupled together. The capacitive structures of the first group are intertwined with the capacitive structures of the second group.</p> |
申请公布号 |
WO2008154159(A1) |
申请公布日期 |
2008.12.18 |
申请号 |
WO2008US64983 |
申请日期 |
2008.05.28 |
申请人 |
QUALCOMM INCORPORATED;BANG, DAVID |
发明人 |
BANG, DAVID |
分类号 |
H01G4/38;H01G4/06;H01L21/02 |
主分类号 |
H01G4/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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