发明名称 INTERTWINED FINGER CAPACITORS
摘要 <p>Capacitive structures in integrated circuits are disclosed. The capacitive structures are formed on a substrate. Each capacitive structure includes a first conductive finger and a second conductive finger. The first and second conductive fingers are arranged in parallel with each other and separated from each other by a dielectric material. The first finger is connected to a first interconnect and the second conductive finger is connected to a second interconnect. A first capacitor is formed from a first group of the plurality of capacitive structures having respective interconnects coupled together. A second capacitor is formed from a second group of the plurality of capacitive structures having respective interconnects coupled together. The capacitive structures of the first group are intertwined with the capacitive structures of the second group.</p>
申请公布号 WO2008154159(A1) 申请公布日期 2008.12.18
申请号 WO2008US64983 申请日期 2008.05.28
申请人 QUALCOMM INCORPORATED;BANG, DAVID 发明人 BANG, DAVID
分类号 H01G4/38;H01G4/06;H01L21/02 主分类号 H01G4/38
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