| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor whose peripheral circuits can be integrated by reducing the layout area of contact holes, a display unit on which this thin-film transistor is mounted, and to provide a manufacturing method therefor. SOLUTION: This thin-film transistor comprises a gate electrode 7, a semiconductor layer, having a source region 4a and a drain region 4c which sandwich a channel region 4b, electrically conductive thin films 5, formed in contact with the source region and the drain region in the channel width direction, respectively, and electrodes on the electrically conductive thin films, connected to the source and drain regions via contact holes opposed to the gate electrode in the channel length direction, respectively. The dimension of the electrically conductive thin film in the channel length direction, in at least a part thereof in the non-neighborhood of the contact hole formation region is made smaller than that in the neighborhood of the contact hole formation region. COPYRIGHT: (C)2009,JPO&INPIT
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