发明名称 |
Methods of Patterning Photoresist, and Methods of Forming Semiconductor Constructions |
摘要 |
The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The invention also includes methods of patterning photoresist in which a saturable absorption layer is provided between the photoresist and a topography with surfaces of differing reflectivity, and in which the differences in reflectivity are utilized to enhance the accuracy with which an image is photolithographically formed in the photoresist.
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申请公布号 |
US2008311528(A1) |
申请公布日期 |
2008.12.18 |
申请号 |
US20080196114 |
申请日期 |
2008.08.21 |
申请人 |
BISSEY LUCIEN J;STANTON WILLIAM A |
发明人 |
BISSEY LUCIEN J.;STANTON WILLIAM A. |
分类号 |
G03F7/20;G03F7/00 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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